MagnaChip Semiconductor Ltd is offering foundry customers a cost-effective, high-performance 0.11µm high voltage 30V process technology. It is also developing a 0.11µm high voltage 20V process that is scheduled for release by the end of 2009.

MagnaChip's 0.11µm high voltage 30V process achieves cost reduction by dramatically reducing the pitch of the high voltage transistor when compared to other foundries and also provides technology competitiveness with the smallest SRAM cell size at the 0.11µm node and reduced mask layers. These features combine to enable MagnaChip's customers significant advantages over their competitors.

MagnaChip has combined the cost and device performance of the smaller chips with better leakage characteristics, high speed, more uniform and higher isolation breakdown voltage and improved latch-up immunity. First products from new 0.11µm high voltage 30V process are sampling now. Mass production will begin in 1H 2010.

The South Korea analog and mixed-signal designer also offers process options such as high-k MIM capacitor, high resistance poly resistor, fully isolated HV NMOS, BN capacitor, and a cost effective embedded Schottky diode. These will all be available by early 2010. A designer friendly Process Design Kit is also available to customers.

Channy Lee, executive VP and general manager of MagnaChip's semiconductor manufacturing services, emphasized, "MagnaChip has been making substantial efforts to develop industry leading advanced 0.11µm high voltage process technologies. We are very pleased to finally announce the offering of our advanced 0.11µm 30V process technology to better meet the increasing demand for high volume and high growth target applications such as mobile handsets etc."